Wed Sep 25 02:08:04 UTC 2024: ## Toshiba Expands Silicon Carbide Diode Lineup with Industry-Leading Efficiency
**KAWASAKI, Japan** – Toshiba Electronic Devices & Storage Corporation (Toshiba) has announced the launch of its “TRSxxx120Hx Series” of 1200V silicon carbide (SiC) Schottky barrier diodes (SBDs). This latest addition to Toshiba’s third-generation SiC SBD lineup is designed for industrial equipment, including photovoltaic inverters, EV charging stations, and switching power supplies.
The new series utilizes a novel junction-barrier Schottky (JBS) structure, incorporating Toshiba’s Merged PiN Schottky (MPS) technology. This advanced structure allows the new products to achieve industry-leading low forward voltage (1.27V), reduced total capacitive charge, and minimized reverse current. This translates to significantly reduced power loss in high-power applications, contributing to greater efficiency and energy savings.
Toshiba is actively expanding its SiC power device portfolio, with a strong focus on improving the efficiency of industrial power equipment. The company’s commitment to innovation ensures that its products continue to push the boundaries of what’s possible in terms of power management and energy efficiency.
The new TRSxxx120Hx Series comprises ten products, available in both TO-247-2L and TO-247 packages. Toshiba has begun shipping these products immediately.
**Key Features of the TRSxxx120Hx Series:**
* Industry-leading low forward voltage of 1.27V (typ.)
* Low total capacitive charge
* Low reverse current
* Designed for high-power applications
* Available in TO-247-2L and TO-247 packages
Toshiba’s commitment to developing and deploying efficient power technologies will continue to play a vital role in the drive towards a more sustainable future.
First Piper 