Thu Sep 12 00:41:42 UTC 2024: ## Samsung Mass Produces Industry’s First 1 Terabit QLC V-NAND, Leading in High-Capacity Storage Solutions

**Seoul, South Korea –** Samsung Electronics announced today that it has begun mass production of its groundbreaking 1-terabit (Tb) quad-level cell (QLC) 9th-generation vertical NAND (V-NAND). This follows the company’s successful launch of the industry’s first triple-level cell (TLC) 9th-generation V-NAND in April, cementing Samsung’s dominance in the high-capacity, high-performance NAND flash market.

“This successful mass production of QLC 9th-generation V-NAND, just four months after the TLC version, allows us to offer a complete range of advanced SSD solutions catering to the needs of the AI era,” said SungHoi Hur, Executive Vice President and Head of Flash Product & Technology at Samsung Electronics. “As the enterprise SSD market experiences rapid growth with increasing demand for AI applications, we will continue to strengthen our leadership through our QLC and TLC 9th-generation V-NAND.”

Samsung plans to expand the applications of its QLC 9th-generation V-NAND, initially focusing on branded consumer products and expanding into mobile Universal Flash Storage (UFS), PCs, and server SSDs for clients including cloud service providers.

The new QLC 9th-generation V-NAND incorporates several innovations that have resulted in technological breakthroughs, including:

* **Channel Hole Etching:** A new technique that enhances the performance of the NAND flash memory.
* **Designed Mold:** A sophisticated design that allows for increased data storage capacity.
* **Low-Power Design:** A more efficient design that reduces energy consumption.
* **Predictive Program:** An innovative technology that optimizes data storage and retrieval.

Samsung’s latest development will further propel the company’s dominance in the global memory market, providing customers with high-performance, high-capacity storage solutions for the growing demands of the AI era.

Read More